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this is information on a product in full production. may 2014 docid024520 rev 3 1/22 22 STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd n-channel 600 v, 0.13 typ., 23 a fdmesh? ii power mosfets in d2pak, to-220fp, to-220 and to-247 packages datasheet - production data figure 1. internal schematic diagram features ? intrinsic fast-recovery body diode ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance ? extremely high dv/dt and avalanche capabilities applications ? switching applications description these fdmesh? ii power mosfets with intrinsic fast-recovery body diode are produced using the second generation of mdmesh? technology. utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. they are ideal for bridge topologies and zvs phase-shift converters. to-247 d pak 2 to-220 1 3 t ab 2 1 2 3 tab 1 2 3 1 2 3 to-220fp 1 2 3 $0y '7$% * 6 order codes v ds @ t j max. r ds(on) max i d STB28NM60ND 650 v 0.150 ? 23 a stf28nm60nd stp28nm60nd stw28nm60nd table 1. device summary order codes marking packages packaging STB28NM60ND 28nm60nd d 2 pak tape and reel stf28nm60nd to-220fp tube stp28nm60nd to-220 stw28nm60nd to-247 www.st.com
contents STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd 2/22 docid024520 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 d 2 pak, STB28NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-220fp, stf28nm60nd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 to-220, stp28nm60nd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.4 to-247, stw28nm60nd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5 packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
docid024520 rev 3 3/22 STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d 2 pak, to-220, to-247 to-220fp v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 23 23 (1) 1. limited by maximum junction temperature a i d drain current (continuous) at t c = 100 c 14.5 14.5 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 92 92(1) a p tot total dissipation at t c = 25 c 190 35 w dv/dt (3) 3. i sd 23 a, di/dt 600 a/ s, v dd = 80% v (br)dss peak diode recovery voltage slope 40 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c =25 c) 2500 v t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter d2pak to-220fp to-220 to-247 unit r thj-case thermal resistance junction-case max 0.66 3.6 0.66 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 30 c/w table 4. avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 5a e as single pulse avalanche energy (starting t j = 25 c, i d = i as , v dd = 50 v) 450 mj
electrical characteristics STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd 4/22 docid024520 rev 3 2 electrical characteristics (t case =25 c unless otherwise specified). table 5. on/off states symbol parameter test conditions value unit min. typ. max. v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v dv/dt (1) 1. characteristic value at turn off on inductive load. drain source voltage slope v dd = 480 v, i d = 23 a, v gs = 10 v 45 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = 600 v 1 a v ds = 600 v, t c = 125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a345v r ds(on) static drain-source on resistance v gs = 10 v, i d = 11.5 a 0.13 0.15 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 2090 - pf c oss output capacitance - 90 - pf c rss reverse transfer capacitance -5.5- pf c oss eq. (1) 1. c oss eq . is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 312 - pf t d(on) turn-on delay time v dd = 300 v, i d = 11.5 a r g =4.7 v gs = 10 v (see figure 18) , (see figure 20) -23.5- ns t r rise time - 21.5 - ns t d(off) turn-off delay time - 92 - ns t f fall time - 27 - ns q g total gate charge v dd = 480 v, i d = 23 a, v gs = 10 v, (see figure 10) -62.5- nc q gs gate-source charge - 11 - nc q gd gate-drain charge - 38 - nc r g gate input resistance f = 1 mhz, test signal level = 20 mv, i d = 0 -4.7-
docid024520 rev 3 5/22 STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd electrical characteristics table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 23 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 92 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 23 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 23 a, v dd = 60 v di/dt=100 a/ s (see figure 17) - 170 ns q rr reverse recovery charge - 1160 nc i rrm reverse recovery current - 14 a t rr reverse recovery time i sd = 23 a,v dd = 60 v di/dt=100 a/ s, t j = 150 c (see figure 17) - 237 ns q rr reverse recovery charge - 2090 nc i rrm reverse recovery current - 18 a
electrical characteristics STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd 6/22 docid024520 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak and to-220 figure 3. thermal impedance for d 2 pak and to-220 i d 10 1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.1 tj=150c tc=25c single pulse am16038v1 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp i d 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.01 tj=150c tc=25c single pulse 10 am16039v1 figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.1 tj=150c tc=25c single pulse am16040v1
docid024520 rev 3 7/22 STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd electrical characteristics figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 50 30 10 0 0 5 v ds (v) 10 (a) 15 5v 6v v gs =10v 20 40 60 7v 8v 9v 20 am16041v1 i d 60 40 20 0 0 4 v gs (v) 8 (a) 2 6 10 10 30 50 v ds =19v am16042v1 v gs 6 4 2 0 0 20 q g (nc) (v) 60 8 30 40 10 v dd =480v i d =23a 12 300 200 100 0 400 500 v ds 10 50 v ds (v) 70 am16043v1 r ds(on) 0.126 0.124 0.122 0 10 i d (a) ( ) 5 15 0.128 v gs =10v 20 0.130 0.132 0.134 0.136 am16044v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 10000 am16045v1 e oss 4 2 0 0 100 v ds (v) (j) 400 200 300 6 500 600 8 10 12 am16046v1
electrical characteristics STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd 8/22 docid024520 rev 3 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized v ds vs temperature v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250a am16047v1 r ds(on) 1.9 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.7 2.1 i d =11.5a v gs =10v am16048v1 v sd 0 8 i sd (a) (v) 4 12 16 0 0.2 0.4 0.6 0.8 1 t j =-50c t j =150c t j =25c 20 1.4 1.2 am16050v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 i d =1ma 1.08 1.10 am16049v1
docid024520 rev 3 9/22 STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd test circuits 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd 10/22 docid024520 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024520 rev 3 11/22 STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd package mechanical data 4.1 d 2 pak, STB28NM60ND figure 24. d2pak (to-263) drawing 0079457_t
package mechanical data STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd 12/22 docid024520 rev 3 figure 25. d2pak footprint (a) table 8. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8 a. all dimension are in millimeters 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid024520 rev 3 13/22 STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd package mechanical data 4.2 to-220fp, stf28nm60nd figure 26. to-220fp drawing 7012510_rev_k_b
package mechanical data STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd 14/22 docid024520 rev 3 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
docid024520 rev 3 15/22 STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd package mechanical data 4.3 to-220, stp28nm60nd figure 27. to-220 type a drawing bw\sh$b5hyb7
package mechanical data STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd 16/22 docid024520 rev 3 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid024520 rev 3 17/22 STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd package mechanical data 4.4 to-247, stw28nm60nd figure 28. to-247 drawing 0075325_g
package mechanical data STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd 18/22 docid024520 rev 3 table 11. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid024520 rev 3 19/22 STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd packing mechanical data 5 packing mechanical data figure 29. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
packing mechanical data STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd 20/22 docid024520 rev 3 figure 30. reel table 12. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
docid024520 rev 3 21/22 STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd revision history 6 revision history table 13. document revision history date revision changes 15-apr-2013 1 first release. 25-nov-2013 2 ? document status changed from preliminary to production data ? modified: typical values in table 6 and 7 ? added: section 2.1: electrical characteristics (curves) ? updated: table 10 and figure 27 ? minor text changes 05-may-2014 3 ? modified: e as value in table 4 ? minor text changes
STB28NM60ND, stf28nm60nd, stp28nm60nd, stw28nm60nd 22/22 docid024520 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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